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data sheet 1 rev.1.3, 2009-12-04 speed tempfet bts247z speed tempfet ? ? ? ? n-channel enhancement mode logic level input analog driving possible fast switching up to 1 mhz potential-free temperature sensor with thyristor characteristics overtemperature protection avalanche rated 1 5 type v ds r ds(on) package ordering code bts 247 z 55 v 18 m p g -to2 20 -5- 3 on request p g -to220-5-62 on request pg- to-220-5-43 on request temperature sensor g pin 1 a pin 2 d pin 3 and tab k pin 4 s pin 5 pin symbol function 1 g gate 2 a anode temperature sensor 3 d drain 4 k cathode temperature sensor 5 s source ? green product (rohs compliant) ? aec qualified pg-to220-5-62 pg-to220-5-3 pg-to220-5-43
speed tempfet bts247z data sheet 2 rev.1.3, 2009-12-04 maximum ratings parameter symbol value unit drain source voltage v ds 55 v drain-gate voltage , r gs = 20 k v dgr 55 gate source voltage v gs 20 nominal load current (iso 10483) v gs = 4.5 v, v ds 0.5 v, t c = 85 c v gs = 10 v, v ds 0.5 v, t c = 85 c i d(iso) 12 19 a continuous drain current 1) t c = 100 c, v gs = 4.5v i d 33 pulsed drain current i d p uls 180 avalanche energy, single pulse i d = 12 a, r gs = 25 e as 1.3 j power dissipation t c = 25 c p tot 120 w operating temperature 2) t j -40 ...+175 c peak temperature ( single event ) t jp eak 200 storage temperature t st g -55 ... +150 din humidity category, din 40 040 e iec climatic category; din iec 68-1 40/150/56 1 current limited by bond wire 2 note: thermal trip temperature of temperature sensor is below 175c
data sheet 3 rev.1.3, 2009-12-04 speed tempfet bts247z thermal characteristics parameter symbol values unit min. typ. max. characteristics junction - case: r thjc - - 1.25 k/w thermal resistance @ min. footprint r th ( ja ) - - 62 thermal resistance @ 6 cm 2 cooling area 1) r th ( ja ) - 33 40 electrical characteristics parameter symbol values unit at t j = 25c, unless otherwise specified min. typ. max. static characteristics drain-source breakdown voltage v gs = 0 v, i d = 0.25 ma v (br)dss 55 - - v gate threshold voltage, v gs = v ds i d = 90 a i d = 250 a v gs(th) 1.2 - 1.6 1.65 2 - zero gate voltage drain current v ds = 50 v, v gs = 0 v, t j = -40 c v ds = 50 v, v gs = 0 v, t j = 25 c v ds = 50 v, v gs = 0 v, t j = 150 c i dss - - - - 0.1 - 0.1 1 100 a gate-source leakage current v gs = 20 v, v ds = 0 v, t j = 25 c v gs = 20 v, v ds = 0 v, t j = 150 c i gss - - 10 20 100 100 na drain-source on-state resistance v gs = 4.5 v, i d = 12 a v gs = 10 v, i d = 12 a r ds(on) - - 22 15 28 18 m 1 device on 50mm*50mm*1.5mm epoxy pcb fr4 with 6cm 2 (one layer, 70m thick) copper area for drain connection. pcb mounted vertical without blown air.
speed tempfet bts247z data sheet 4 rev.1.3, 2009-12-04 electrical characteristics parameter symbol values unit at t j = 25c, unless otherwise specified min. typ. max. dynamic characteristics forward transconductance v ds >2* i d * r ds(on)max , i d = 33 a g fs 10 - - s input capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz c iss - 1380 1730 pf output capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz c oss - 410 515 reverse transfer capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz c rss - 230 290 turn-on delay time v dd = 30 v, v gs = 4.5 v, i d = 45 a, r g = 3.6 t d(on) - 15 25 ns rise time v dd = 30 v, v gs = 4.5 v, i d = 45 a, r g = 3.6 t r - 30 45 turn-off delay time v dd = 30 v, v gs = 4.5 v, i d = 45 a, r g = 3.6 t d(off) - 30 45 fall time v dd = 30 v, v gs = 4.5 v, i d = 45 a, r g = 3.6 t f - 20 30 gate charge characteristics gate charge at threshold v dd = 40 v, i d = 0.1 a, v gs = 0 to 1 v q g(th) - 2 3 nc gate charge at 5.0 v v dd = 40 v, i d = 45 a, v gs = 0 to 5 v q g(5) - 35 55 gate charge total v dd = 40 v, i d = 45 a, v gs = 0 to 10 v q g(total) - 60 90 gate plateau voltage v dd = 40 v, i d = 45 a v (plateau) - 4.5 - v
data sheet 5 rev.1.3, 2009-12-04 speed tempfet bts247z electrical characteristics parameter symbol values unit at t j = 25c, unless otherwise specified min. typ. max. reverse diode inverse diode continuous forward current t c = 25 c i s 33 - - a inverse diode direct current,pulsed t c = 25 c i fm 180 - - inverse diode forward voltage v gs = 0 v, i f = 90 a v sd - 1.1 1.7 v reverse recovery time v r = 30 v, i f = i s , d i f /d t = 100 a/s t rr - 75 115 ns reverse recovery charge v r = 30 v, i f = i s , d i f /d t = 100 a/s q rr - 0.15 0.25 c sensor characteristics for temperature sensing, i.e. temperature protection, please consider application note "temperature sense concept - speed tempfet. for short circuit protection please consider application note "short circuit behaviour of the speed tempfet family. all application notes are available at http://www.infineon.com/tempfet/ forward voltage i ak(on) = 5 ma, t j = -40...+150 c i ak(on) = 1.5 ma, t j = 150 c v ak(on) - - 1.3 - 1.4 0.9 v sensor override t p = 100 s, t j = -40...+150 c - - 10 forward current t j = -40...+150 c i ak(on) - - 5 ma sensor override t p = 100 s, t j = -40...+150 c - - 600
speed tempfet bts247z data sheet 6 rev.1.3, 2009-12-04 electrical characteristics parameter symbol values unit at t j = 25c, unless otherwise specified min. typ. max. sensor characteristics temperature sensor leakage current t j = 150 c i ak(off) - - 4 a min. reset pulse duration 1) t j = -40...+150 c, i ak(on) = 0.3 ma, v ak(reset) <0.5v t reset 100 - - s v ak recovery time 1)2) t j = -40...+150 c, i ak(on) = 0.3 ma t recovery - - 150 characteristics holding current, v ak(off) = 5v t j = 25 c t j = 150 c i ak(hold) 0.05 0.05 - - 0.5 0.3 ma thermal trip temperature v ts = 5v t ts(on) 150 160 170 c turn-off time (pin g+a and k+s connected) v ts = 5v, i ts(on) = 2 ma t off 0.5 - 2.5 s reset voltage t j = -40...+150c v ak(reset) 0.5 - - v sensor recovery behaviour: v ak [v ] t reset t recovery 5 4 0 on reset off sensor sensor reset 1 see diagram sensor recovery behaviour 2 time after reset pulse until v ak reaches 4v again
data sheet 7 rev.1.3, 2009-12-04 speed tempfet bts247z 2 drain current i d = f( t c ); v gs 4.5v 0 20 40 60 80 100 120 140 c 180 t c 0 5 10 15 20 25 30 a 40 i d 1 maximum allowable power dissipation p tot = f(t c ) -40 0 40 80 120 c 180 t c 0 10 20 30 40 50 60 70 80 90 100 110 w 130 p tot 3 typ. transient thermal impedance z thja =f( t p ) @ 6 cm 2 cooling area parameter: d = t p / t 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 3 s t p -1 10 0 10 1 10 2 10 k/w z thja single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 4 transient thermal impedance z thjc = f ( t p ) parameter : d = t p / t 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 2 s t p -4 10 -3 10 -2 10 -1 10 0 10 1 10 k/w z thjc single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5
speed tempfet bts247z data sheet 8 rev.1.3, 2009-12-04 5 safe operating area i d =f(v ds ); d =0.01; t c =25c; v gs =4.5v 10 0 10 1 10 2 v v ds 0 10 1 10 2 10 3 10 a i d tp=10s 10ms 1ms rdson=vds/id 100s 6 typ. output characteristic i d = f(v ds ); t j =25c parameter: v gs 0 1 2 v 4 v ds 0 20 40 60 80 a 120 i d 3v 3.5v 4v 4.5v 5v 6v 7v 10v 7 on-state resistance r on = f(t j ); i d =12a; v gs = 4.5v -50 -25 0 25 50 75 100 125 c 175 t j 0 5 10 15 20 25 30 35 40 45 50 m 60 r ds(on) typ. max 8 on-state resistance r on = f(t j ); i d =12a; v gs = 10v -50 -25 0 25 50 75 100 125 c 175 t j 0 5 10 15 20 25 30 m 40 r ds(on) typ. max
data sheet 9 rev.1.3, 2009-12-04 speed tempfet bts247z 9 typ. transfer characteristics i d = f( v gs ); v ds = 12v; t j = 25c 0 1 2 3 v 5 v gs 0 10 20 30 40 50 a 70 i d 10 typ. input threshold voltage v gs(th) = f(t j ); v ds = v gs parameter: i d -50 -25 0 25 50 75 100 125 c 175 t j 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v 2.4 v gs(th) 90a 0.9ma 9ma 90ma 11 typ. capacitances c = f( v ds ); v gs =0 v, f =1 mhz 0 4 8 12 16 20 24 28 32 v 40 v ds -1 10 0 10 1 10 nf c ciss coss crss 12 typ. forward charcteristics of reverse diode i f = f( v sd ) t p = 80s (spread); parameter: t j 0.0 0.2 0.4 0.6 0.8 1.0 v 1.4 v sd -1 10 0 10 1 10 2 10 a i f 25c 150c
speed tempfet bts247z data sheet 10 rev.1.3, 2009-12-04 13 typ. gate charge v gs = f( q gate ); i d puls = 45 a 0 10 20 30 40 50 60 70 80 nc 100 q gate 0 2 4 6 8 10 12 v 16 bts 247 z v gs 0,8 v ds max ds max v 0,2 14 drain-source break down voltage v (br)dss = f( t j ) -40 0 40 80 120 c 180 t j 50 52 54 56 58 60 62 v 66 v (br)dss
data sheet 11 rev.1.3, 2009-12-04 speed tempfet bts247z package outlines 1 package outlines figure 1 pg-to220-5-3 figure 2 pg-to220-5-62 0.2 0.2 9.9 9.5 a 7.5 6.6 2.8 0.2 3.7 -0.15 c 17.5 0.3 15.6 0.3 13 0.3 8.6 0.3 10.2 0...0.15 0.25 0.1 5 x 0.8 ab m c 4 x 1.7 1.3 b +0.1 -0.02 4.4 1) 0.05 9.2 0.2 0.5 0 .1 2.4 4.5 0.3 0.3 8.4 0.3 3.3 back side, heatsink contour all metal surfaces tin plated, except area of cut. 1) shear and punch direction no burrs this surface p-to220-5-62-po v01 a b +0.1 1.3 +3? 5? 1.5 -0.02 +0.1 5 x 0.8 -0.03 0.05 0.1 b 0.25 m a b 1) 9.9 (14.1) ?.2 ?.25 9.2 8.0 0...0.15 4 x 1.7 6.5 +0.15 0.1 2.4 ?.3 3.6 0.5 4.4 7.5 6.6 (1.3) ?.15 10.5 all metal surfaces tin plated, except area of cut. 1) shear and punch direction no burrs this surface. back side, heatsink contour
speed tempfet bts247z package outlines data sheet 12 rev.1.3, 2009-12-04 figure 3 pg-to220-5-43 green product (rohs compliant) to meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. green products are rohs-compliant (i.e pb-free finish on leads and suitable for pb-free soldering according to ipc/jedec j-std-020). 6.6 7.5 9.5 0.2 9.9 0.2 a 13 15.6 0.3 17.5 0.3 c 0...0.15 2.8 0.2 3.7 -0.15 0.5 13.5 5 x 0.8 0.1 1.7 4 x 0.25 m b a c 1.3 -0.02 +0.1 4.4 b 9.2 0.2 1) 0.05 0 .1 0.5 2.4 1) shear and punch direction no burrs this surface all metal surfaces tin plated, except area of cut. back side, heatsink contour for further information on alternativ e packages, please vi sit our website: http://www.infineon.com/packages . dimensions in mm
data sheet 13 rev.1.3, 2009-12-04 speed tempfet bts247z revision history 2 revision history revision date changes 1.3 2009-12-04 updated package drawing of pg-to220-5-62 1.2 2009-07-31 removed 100ms and dc line in soa diagram 1.1 2008-11-10 all pages: added new infineon logo initial version of rohs-comp liant derivate of the bts247z page 1 and 12: added rohs compliance statement and green product feature page 1, 11 and 12: package changed to rohs compliant version page 13: added revision history page 14: update of disclaimer
edition 2009-12-04 published by infineon technologies ag 81726 munich, germany ? 2009 infineon technologies ag all rights reserved. legal disclaimer the information given in this docu ment shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infine on technologies hereby disclaims any and all warranties and liabilities of any kind, including witho ut limitation, warranties of non-infrin gement of intellectua l property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies compon ents may be used in life-su pport devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safe ty or effectiveness of that de vice or system. life support devices or systems are intended to be implanted in the hu man body or to support an d/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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